Method of forming high aspect ratio structures

Details Method of forming high aspect ratio structures Method of forming high aspect ratio structures

2011-04-26

2011-04-26

Pizarro, Marcos D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27088, C257SE27089

Reexamination Certificate

active

07932550

ABSTRACT:
An etching process includes providing a dielectric first film on a substrate and a sacrificial second film on the dielectric first film. A conductive structure such as a container capacitor is formed in a recess in the first and second films. The conductive structure is exposed as to its external surface by an etch process that resists destructive collapse of the conductive structure.

REFERENCES:
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5234540 (1993-08-01), Grant et al.
patent: 5439553 (1995-08-01), Grant et al.
patent: 5496757 (1996-03-01), Rosner
patent: 5514182 (1996-05-01), Shea
patent: 5685951 (1997-11-01), Torek et al.
patent: 5770510 (1998-06-01), Lin et al.
patent: 5783495 (1998-07-01), Li et al.
patent: 5817182 (1998-10-01), O'Brien
patent: 5885903 (1999-03-01), Torek
patent: 5966611 (1999-10-01), Jost et al.
patent: 5981334 (1999-11-01), Chien et al.
patent: 5981401 (1999-11-01), Torek et al.
patent: 5990019 (1999-11-01), Torek et al.
patent: 6087273 (2000-07-01), Torek
patent: 6090683 (2000-07-01), Torek
patent: 6103637 (2000-08-01), Torek et al.
patent: 6124626 (2000-09-01), Sandhu et al.
patent: 6150277 (2000-11-01), Torek
patent: 6165853 (2000-12-01), Nuttall et al.
patent: 6194286 (2001-02-01), Torek
patent: 6200909 (2001-03-01), Torek et al.
patent: 6232232 (2001-05-01), Lee et al.
patent: 6235145 (2001-05-01), Li et al.
patent: 6290863 (2001-09-01), Morgan et al.
patent: 6350547 (2002-02-01), Torek
patent: 6372657 (2002-04-01), Hineman et al.
patent: 6417537 (2002-07-01), Yang et al.
patent: 6453914 (2002-09-01), Torek et al.
patent: 6517738 (2003-02-01), Torek et al.
patent: 6541391 (2003-04-01), Smith et al.
patent: 6559498 (2003-05-01), Kitamura
patent: 6562726 (2003-05-01), Torek et al.
patent: 6576557 (2003-06-01), Torek et al.
patent: 6589884 (2003-07-01), Torek
patent: 6595277 (2003-07-01), Zins et al.
patent: 6599683 (2003-07-01), Torek et al.
patent: 6617180 (2003-09-01), Wang
patent: 6645874 (2003-11-01), Torek et al.
patent: 6705500 (2004-03-01), Shea et al.
patent: 6709983 (2004-03-01), Torek et al.
patent: 6734089 (2004-05-01), Hu et al.
patent: 6740593 (2004-05-01), Torek
patent: 6740597 (2004-05-01), Torek et al.
patent: 6764947 (2004-07-01), Chan et al.
patent: 6825121 (2004-11-01), Kwean et al.
patent: 6830979 (2004-12-01), Wada
patent: 2001/0037699 (2001-05-01), Lee
patent: 2001/0037816 (2001-11-01), Torek et al.
patent: 2001/0051440 (2001-12-01), Torek et al.
patent: 2002/0064915 (2002-05-01), Kitamura
patent: 2002/0119656 (2002-08-01), Smith et al.
patent: 2002/0127795 (2002-09-01), Shih
patent: 2002/0160577 (2002-10-01), Hosoda et al.
patent: 2002/0163026 (2002-11-01), Park
patent: 2002/0170938 (2002-11-01), Shea et al.
patent: 2003/0010726 (2003-01-01), Zins et al.
patent: 2003/0143869 (2003-07-01), Torek et al.
patent: 2003/0143870 (2003-07-01), Torek et al.
patent: 2003/0196678 (2003-10-01), Torek et al.
patent: 2003/0222241 (2003-12-01), Torek et al.
patent: 2004/0018679 (2004-01-01), Yu et al.
patent: 2004/0083284 (2004-04-01), Ofek et al.
patent: 2004/0147074 (2004-07-01), Sell et al.
patent: 2004/0175884 (2004-09-01), Kang et al.
patent: 2005/0191856 (2005-09-01), Torek et al.

Affiliated with

Also associated with

Rating

Method of forming high aspect ratio structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming high aspect ratio structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming high aspect ratio structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2618793