Method of forming high aspect ratio apertures

Details Method of forming high aspect ratio apertures Method of forming high aspect ratio apertures

2006-12-14

2009-10-27

Sergent, Rabon (Department: 1796)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C204S169000, C204S170000, C216S013000, C216S017000, C216S041000, C216S074000, C216S079000, C361S230000, C361S235000, C438S710000, C438S715000, C438S723000

Reexamination Certificate

active

07608196

ABSTRACT:
A plasma etch process for etching a dielectric material employing two primary etchants at low flows and pressures, and a relatively low temperature environment within the etch chamber. The two primary etchant gases are CHF3and CH2F2, delivered at flow rates on the order of between about 10 sccm and 40 sccm for CHF3and between about 10 sccm and 40 sccm for CH2F2. Small quantities, on the order of 10 sccm or less, of other gases such as C2HF5and CF4may be added.

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