Method of forming fluorine-doped low-dielectric-constant...

Details Method of forming fluorine-doped low-dielectric-constant... Method of forming fluorine-doped low-dielectric-constant...

2006-05-02

2006-05-02

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S778000, C438S779000, C438S479000

Reexamination Certificate

active

07037855

ABSTRACT:
A method of forming low-dielectric-constant silicon oxide films by capacitive-coupled plasma CVD comprises: introducing a processing gas comprising SiH4as a silicon source gas, SiF4as a fluorine source gas, and CO2as an oxidizing gas to a reaction chamber at a ratio of (SiH4+SiF4)/CO2in the range of 0.02 to 0.2 and at a total pressure of 250 Pa to 350 Pa; applying first RF power at a frequency of 10 MHz to 30 MHz and second RF power at a frequency of 400 kHz to 500 kHz by overlaying the two RF powers to generate a plasma reaction field within the reaction chamber; and controlling a flow of the respective gases and the respective RF power outputs.

REFERENCES:
patent: 6303518 (2001-10-01), Tian et al.
patent: 6511922 (2003-01-01), Krishnaraj et al.
patent: 2004/0091717 (2004-05-01), Li et al.
patent: 2002-141348 (2002-05-01), None
Hyeok-Sang Oh, et al., The Effect of FSG Stability at High Temperature on Stress-Induced Voiding in Cu Dual-damascene Interconnects, Jun., 2004.

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