Method of forming flash memory device having inter-gate plug

Details Method of forming flash memory device having inter-gate plug Method of forming flash memory device having inter-gate plug

2010-07-02

2011-10-11

Arora, Ajay K (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S386000, C438S399000, C257S314000, C257S296000, C257SE21686, C257SE21683

Reexamination Certificate

active

08034681

ABSTRACT:
A method of forming a non-volatile memory device includes the following steps. First and second cell gates are formed in a cell region. First and second peripheral gates are formed in a peripheral-region. A first insulating layer is formed over the first and second cell gates and the first and second peripheral gates. A second conductive layer is formed over the first insulating layer. A third insulating layer is formed over the second conductive layer. Selected portions of the third insulating layer, the second conductive layer, and the first insulating layer are removed to form an inter-gate plug provided between the first and second cell gates. The inter-gate plug completely fills a space defined between the first and second cell gates.

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