Method of forming dummy copper plug to improve low k...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S629000, C438S637000, C438S672000, C438S675000, C438S622000

Reexamination Certificate

active

06887790

ABSTRACT:
A new method is provided for the creation of dummy plugs in support of creating a robust structure of overlying interconnect traces. A pattern of holes for dummy plugs is etched stopping at an etch stop layer, the etch stop layer is then removed from the bottom of the holes that have been created whereby this removal is extended into an underlying layer of insulating material. The pattern of holes is filled with a metal, preferably copper, excess metal is removed by methods of Chemical Mechanical Polishing, leaving in place a pattern of metal plugs that penetrate through layers of insulation material and through layers of etch stop material and into an underlying layer of semiconductor material.

REFERENCES:
patent: 6016000 (2000-01-01), Moslehi
patent: 6087733 (2000-07-01), Maxim et al.
patent: 6103626 (2000-08-01), Kim
patent: 6150232 (2000-11-01), Chan et al.
patent: 6259115 (2001-07-01), You et al.
patent: 6274485 (2001-08-01), Chen et al.
patent: 6380087 (2002-04-01), Gupta et al.
patent: 6582974 (2003-06-01), Lui et al.

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