Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S629000, C438S637000, C438S672000, C438S675000, C438S622000
Reexamination Certificate
active
06887790
ABSTRACT:
A new method is provided for the creation of dummy plugs in support of creating a robust structure of overlying interconnect traces. A pattern of holes for dummy plugs is etched stopping at an etch stop layer, the etch stop layer is then removed from the bottom of the holes that have been created whereby this removal is extended into an underlying layer of insulating material. The pattern of holes is filled with a metal, preferably copper, excess metal is removed by methods of Chemical Mechanical Polishing, leaving in place a pattern of metal plugs that penetrate through layers of insulation material and through layers of etch stop material and into an underlying layer of semiconductor material.
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Bao Tien-I
Chen Bi-Trong
Chen Ying-Ho
Haynes and Boone LLP
Nguyen Thanh
Taiwan Semiconductor Manufacturing Company , Ltd.
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