Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-11-22
2005-11-22
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S723000, C438S724000, C438S756000, C438S757000, C438S770000, C438S772000, C438S775000, C438S777000, C438S787000, C438S788000, C438S791000, C438S792000, C438S981000
Reexamination Certificate
active
06967130
ABSTRACT:
A method of forming dual gate insulator layers, each with a specific insulator thickness, featuring a HF type pre-clean procedure performed prior to formation of each of the gate insulator layers, has been developed. After a first HF type pre-clean procedure a silicon nitride layer is deposited on the native oxide free, semiconductor substrate followed by selective removal of silicon nitride layer from a second portion of the semiconductor substrate. After a second HF type pre-clean procedure a silicon dioxide gate insulator layer is formed on the second portion of the native oxide free, semiconductor substrate, with the silicon dioxide gate insulator layer comprised with a different thickness than the silicon nitride gate insulator layer, located on a first portion of the semiconductor substrate. The procedure used to form the silicon dioxide gate insulator layer also removes bulk traps in the silicon nitride gate insulator layer.
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Chen Chi-Chun
Chen Shih-Chang
Lee Tzu-Liang
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
Thomas Toniae M.
Wilczewski Mary
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