Method of forming dielectric layer using plasma enhanced...

Details Method of forming dielectric layer using plasma enhanced... Method of forming dielectric layer using plasma enhanced...

2007-01-23

2007-01-23

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S758000, C438S778000, C257SE21274

Reexamination Certificate

active

11149498

ABSTRACT:
A method of forming a dielectric layer using a plasma enhanced atomic layer deposition technique includes: loading a semiconductor substrate having a three-dimensional structure into a reaction chamber; and repeatedly performing the following steps until a dielectric layer with a desired thickness is formed: supplying a source gas into the reaction chamber; stopping the supply of the source gas and purging the source gas remaining inside the reaction chamber; and supplying oxygen gas into the reaction chamber after purging the source gas, and applying RF power for oxygen plasma treatment, a level of the applied RF power and a partial pressure of the oxygen gas being increased concurrently with an increased aspect ratio of the three-dimensional structure.

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