Method of forming conductor shielding to prevent arcing effect d

Details Method of forming conductor shielding to prevent arcing effect d Method of forming conductor shielding to prevent arcing effect d

1999-01-25

2000-05-30

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, H01L 2144

Patent

active

060690747

ABSTRACT:
A method preventing the arcing effect during contact implantation by employing a conductive shielding film within the contact opening in the fabrication of an integrated circuit is described. A dielectric layer is provided overlying a semiconductor substrate of a wafer. The dielectric layer is etched into to provide a contact opening through the dielectric layer to the semiconductor substrate. A conducting layer is deposited overlying the dielectric layer and within the contact opening. A photoresist mask is formed over the conducting layer having an opening above the contact opening. The wafer is placed in an ion implantation chamber wherein the wafer is held by means of an electrostatic chuck. Ions are implanted into the semiconductor substrate through the conducting layer not covered by the photoresist mask wherein some of the ions are trapped on photoresist mask and wherein the conducting layer conducts the trapped ions throughout the wafer thereby preventing charge damage to the dielectric layer.

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patent: 5940726 (1999-08-01), Yu

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