Method of forming complementary type conductive regions on a sub

Details Method of forming complementary type conductive regions on a sub Method of forming complementary type conductive regions on a sub

1997-12-22

2000-06-13

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438275, 438634, 438738, H01L 218238

Patent

active

060749024

ABSTRACT:
A method of forming complementary type conductive regions on a substrate includes, a) providing a first etch stop layer over a substrate; b) etching a void through the first etch stop layer inwardly towards the substrate; c) providing a first conductive layer of a first conductive material over the first etch stop layer and into the void; d) removing the first conductive layer over the first etch stop layer to eliminate all first conductive material from atop the first etch stop layer, and leaving first conductive material in the void; e) removing the remaining first etch stop layer from the substrate thereby defining a remaining region of first conductive layer; f) providing a second conductive layer of a second conductive material over the substrate and remaining first conductive layer region; and g) removing the second conductive layer over the first conductive layer to eliminate all second is conductive material from atop the first conductive layer, and leaving second conductive material atop the substrate which is adjacent the projecting first conductive material region.

REFERENCES:
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 4605447 (1986-08-01), Brotherton et al.
patent: 4637836 (1987-01-01), Flatley et al.
patent: 4871688 (1989-10-01), Lowrey
patent: 5132236 (1992-07-01), Doan
patent: 5162245 (1992-11-01), Favreau
patent: 5244835 (1993-09-01), Hachiya
patent: 5393233 (1995-02-01), Hong et al.
patent: 5480830 (1996-01-01), Liao et al.
patent: 5534462 (1996-07-01), Fiordalice et al.
patent: 5563093 (1996-10-01), Koda et al.
patent: 5573633 (1996-11-01), Gambino et al.
patent: 5604155 (1997-02-01), Wang
patent: 5654242 (1997-08-01), Komatsu
patent: 5736457 (1998-04-01), Zhao
patent: 5770490 (1998-06-01), Frenette et al.
patent: 5926729 (1999-07-01), Tsai et al.
patent: 5930616 (1998-06-01), Dennison

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