Method of forming BiCMOS devices having mosfet and bipolar secti

Details Method of forming BiCMOS devices having mosfet and bipolar secti Method of forming BiCMOS devices having mosfet and bipolar secti

1996-12-02

1998-09-08

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, 438303, 438305, 438307, 438321, 438558, 438564, 148DIG9, 148DIG124, 257273, 257378, H01L 218238

Patent

active

058044760

ABSTRACT:
A BiCMOS device and a manufacturing method thereof according to the present invention has a gate insulating layer of NMOSFET having non-uniform thickness. The thickness of the end portion of the gate insulating layer, which is near LDD regions, is thicker than that of center portion. Therefore, the GIDL and the gate-drain overlap capacitance is reduced. In addition, in case of the bipolar transistor of the BiCMOS device, there exists a portion of an oxide film below the side portion of the emitter polysilicon and over the side portions of the emitter region. Since this structure serves as a gate of field effect transistor, N- channel is produced in the emitter region when the emitter-base junction is reversely biased and thus the hot carrier reliability is improved.

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