Method of forming an isolation structure

Details Method of forming an isolation structure Method of forming an isolation structure

2011-03-01

2011-03-01

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S412000, C438S424000, C257SE21545, C257SE25029

Reexamination Certificate

active

07897477

ABSTRACT:
Provided is a method of fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a back side, forming a first circuit and a second circuit at the front side of the semiconductor substrate, bonding the front side of the semiconductor substrate to a carrier substrate, thinning the semiconductor substrate from the back side, and forming an trench from the back side to the front side of the semiconductor substrate to isolate the first circuit from the second circuit.

REFERENCES:
patent: 2005/0212071 (2005-09-01), Yue et al.
patent: 2009/0184357 (2009-07-01), Wu

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