Method of forming an isolation layer and method of...

Details Method of forming an isolation layer and method of... Method of forming an isolation layer and method of...

2006-01-10

2006-01-10

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S391000

Reexamination Certificate

active

06984556

ABSTRACT:
A two-step etch process is used to form a vertical collar oxide within the upper portion of a trench capacitor. The first step uses CF4/SiF4/O2chemistry and ends when the bottom of the collar within the trench is opened although a thin oxide layer still remains on the surface of the PAD-nitride. The second etch step uses C4F8chemistry to completely remove the remaining silicon oxide layer. The process provides a good uniformity in thickness of the PAD-nitride layer and sufficient collar oxide thickness in the very top section of the collar oxide. The process is applicable for manufacturing deep trench capacitors for DRAM devices.

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