Method of forming an interconnect structure diffusion...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257SE21590

Reexamination Certificate

active

07378338

ABSTRACT:
In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

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