Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-31
2008-05-27
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21590
Reexamination Certificate
active
07378338
ABSTRACT:
In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.
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Cabral, Jr. Cyril
Kaldor Steffen K.
Kim Hyung-jun
Rossnagel Stephen M.
Blecker Ira D.
Le Thao P.
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