Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-10-22
1999-10-19
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438981, H01L 21336
Patent
active
059703458
ABSTRACT:
The invention comprises an integrated circuit having both low voltage and high voltage MOS transistors and a method for making the integrated circuit. In accordance with the method of making the integrated circuit, a first oxide layer is formed outwardly from a semiconductor substrate comprising a low voltage region and a high voltage region. A sacrificial layer is formed outwardly from the first oxide layer. The part of the sacrificial layer disposed outwardly from the low voltage region is removed to form an intermediate structure. The intermediate structure is selectively etched to remove the part of the first oxide layer disposed outwardly from the low voltage region. A second oxide layer is then formed comprising a first area disposed outwardly from the low voltage region and second area disposed outwardly from the high voltage region. The formation of the second oxide layer in the second area consumes the sacrificial layer.
REFERENCES:
patent: 4851370 (1989-07-01), Doklan et al.
patent: 5665620 (1997-09-01), Nguyen et al.
patent: 5716863 (1998-02-01), Arai
Hattangady Sunil V.
Misium George R.
Bowers Charles
Brady Wade James
Chen Jack
Donaldson Richard L.
Garner Jacqueline J.
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