Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2006-07-13
2009-02-17
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S396000, C438S785000
Reexamination Certificate
active
07491654
ABSTRACT:
Example embodiments of the present invention relate to a method of forming a dielectric thin film and a method of fabricating a semiconductor memory device having the same. Other example embodiments of the present invention relate to a method of forming a ZrO2thin film and a method of fabricating a capacitor of a semiconductor memory device using the ZrO2thin film as a dielectric layer. A method of forming a ZrO2thin film may include supplying a zirconium precursor on a substrate maintained at a desired temperature, thereby forming a chemisorption layer of the precursor on the substrate. The zirconium precursor may be a tris(N-ethyl-N-methylamino)(tert-butoxy) zirconium precursor. The substrate having the chemisorption layer of the precursor may be exposed to the plasma atmosphere of oxygen-containing gas for a desired time, thereby forming a Zr oxide layer on the substrate, and a method of fabricating a capacitor of a semiconductor memory device having the ZrO2thin film.
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Kim Weon-Hong
Kwon Dae-Jin
Park Jung-Min
Song Min-Woo
Won Seok-Jun
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Smith Matthew
Swanson Walter H
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