Method of forming a tunneling insulating layer in...

Details Method of forming a tunneling insulating layer in... Method of forming a tunneling insulating layer in...

2005-06-30

2008-09-30

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C257SE21680

Reexamination Certificate

active

07429511

ABSTRACT:
A method of forming a tunneling insulating layer having a size smaller than the size obtained by the resolution of a photolithography process is provided. The method includes the steps of forming a first insulating layer and a second insulating layer on a substrate, forming a re-flowable material layer pattern to re-flow the re-flowable material layer pattern, removing the second insulating layer and the first insulating layer to expose the substrate, and forming a tunneling insulating layer.

REFERENCES:
patent: 5591658 (1997-01-01), Cacharelis
patent: 5817557 (1998-10-01), Baldi
patent: 6365325 (2002-04-01), Chiang et al.
patent: 6483145 (2002-11-01), Park et al.
patent: 6586301 (2003-07-01), Orita
patent: 2002/0028583 (2002-03-01), Ko et al.
patent: 1233075 (1999-10-01), None
patent: 1434502 (2003-08-01), None
patent: 63-246875 (1988-10-01), None
patent: 09-063989 (1997-03-01), None
patent: 10-2003-0048215 (2003-06-01), None
English Abstract Publication No. CN1233075A.
English Abstract Publication No. CN1434502A.

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