Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-09
2005-08-09
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S723000, C438S724000, C438S719000, C438S743000, C438S744000
Reexamination Certificate
active
06927134
ABSTRACT:
A trench transistor with lower leakage current and higher gate rupture voltage. The gate oxide layer of a trench transistor is grown at a temperature above about 1100° C. to reduce thinning of the oxide layer at the corners of the trench. In a further embodiment, a conformal layer of silicon nitride is deposited over the high-temperature oxide layer, and a second oxide layer is formed between the silicon nitride layer and the gate polysilicon. The first gate oxide layer, silicon nitride layer, and second oxide layer form a composite gate dielectric structure that substantially reduces leakage current in trench field effect transistors.
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Chau Duc
Mo Brian Sze-Ki
Fairchild Semiconductor Corporation
Huynh Yennhu B.
Jr. Carl Whitehead
Townsend and Townsend / and Crew LLP
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