Method of forming a thin layer and method of manufacturing a...

Details Method of forming a thin layer and method of manufacturing a... Method of forming a thin layer and method of manufacturing a...

2006-10-31

2010-12-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S425000, C438S426000

Reexamination Certificate

active

07855117

ABSTRACT:
In a method of forming a thin layer (e.g., a charge trapping nitride layer) of a semiconductor device (e.g. a charge trapping type non-volatile memory device), the nitride layer may be formed on a first area of a substrate. A blocking layer may be formed on the nitride layer. An oxide layer may be formed on a second area of the substrate while preventing or reducing an oxidation of the nitride layer by a radical oxidation process in which oxygen radicals react with the second area of the substrate and the blocking layer in the first area of the substrate. The nitride layer may ensure sufficient charge trapping sites and may have a uniform thickness without oxidation thereof in the radical oxidation process.

REFERENCES:
patent: 5858842 (1999-01-01), Park
patent: 2003/0008526 (2003-01-01), Gambino et al.
patent: 05-198821 (1993-08-01), None
patent: 1020050039339 (2005-04-01), None
patent: 1020050113793 (2005-12-01), None

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