Method of forming a silicon oxynitride layer

Details Method of forming a silicon oxynitride layer Method of forming a silicon oxynitride layer

2006-12-18

2009-08-04

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S775000, C257SE21625

Reexamination Certificate

active

07569502

ABSTRACT:
A SiOxNygate dielectric and a method for forming a SiOxNygate dielectric by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3and then exposing the structure to a plasma comprising a nitrogen source are provided. In one aspect, the structure is annealed after it is exposed to a plasma comprising a nitrogen source. In another aspect, a SiOxNygate dielectric is formed in an integrated processing system by heating a structure comprising a silicon oxide film on a silicon substrate in an atmosphere comprising NH3in one chamber of the integrated processing system and then exposing the structure to a plasma comprising a nitrogen source in another chamber of the integrated processing system.

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