Method of forming a silicon nitride layer on a substrate

Details Method of forming a silicon nitride layer on a substrate Method of forming a silicon nitride layer on a substrate

1999-07-09

2003-11-11

Cuneo, Kamand (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S584000, C438S680000, C438S758000, C438S774000, C438S775000

Reexamination Certificate

active

06645884

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates generally to deposition technologies in integrated circuit chip processing and more particularly to the deposition of silicon nitride films.
2. Discussion of Related Art
The manufacture of semiconductor integrated circuits generally involves the formation of a plurality of layers of material on a semiconductor (e.g., silicon) wafer, each layer serving specific functions generally related to the routing and isolating of specific signals. One or more of these layers may comprise silicon nitride (Si
3
N
4
) as an insulator or mask. A conventional method of forming a silicon nitride layer on a wafer involves locating the wafer on a susceptor within a processing chamber and introducing a mixture of gases such as a silicon source gas, a nitrogen source gas, and a carrier gas into the processing chamber. The gases combine in the processing chamber at generally a pressure of about 300 millitorr (mTorr) to form the silicon nitride layer or film.
The processing chamber is heated by a heat source such as external heat lamps that direct light through transparent walls of the semiconductor processing a chamber to heat the chamber. A temperature measurement device such as a thermocouple, pyrometer, or a thermal camera may be used for detecting a temperature at a location on the susceptor.
The deposition rate, thickness, and uniformity of the silicon nitride layer may depend on a variety of parameters such as the pressure or the temperature in the chamber, or the amount and type of gas and flow rate of the gas across the wafer introduced into a chamber. Additionally, increasing one parameter such as temperature may affect another parameter such as pressure. For example, using a higher temperature generally allows for a lower pressure (e.g., 300 mTorr) to be used. Although higher temperatures result in a higher deposition rate of the silicon nitride layer on a wafer, high temperature deposition has its disadvantages. One disadvantage is that high temperature processing causes outdiffusion of dopants from, for example, P-type conductivity or N-type conductivity regions (P- or N-doped regions) of a semiconductor wafer. Outdiffusion may result in the breakdown of the electrical elements (e.g., transistors, capacitor, diodes, etc.) that are formed from doped regions. Avoidance of such outdiffusion is particularly important as device dimensions decrease below 0.25 &mgr;m.
It is desirable to provide a method of increasing the deposition of a silicon nitride layer on a wafer while avoiding the negative consequences seen in the prior art.
SUMMARY OF THE INVENTION
Methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer are disclosed. In one embodiment of the invention, a mixture of gases that include a carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the processing chamber at a pressure of approximately in the range of 100 to 500 Torr to form a Si
3
N
4
film on a wafer in the processing chamber. In another embodiment of the invention a silicon nitride film is formed using an annular-shaped pumping plate that has a sidewall with a plurality of gas holes that communicate with a pumping channel to introduce the reactants into the chamber. Other aspects and methods of the invention as well as apparatuses formed using these methods are described further below in conjunction with the following figures.


REFERENCES:
patent: 5399387 (1995-03-01), Law et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5629043 (1997-05-01), Inaba et al.
patent: 5663087 (1997-09-01), Yokozawa
patent: 5670431 (1997-09-01), Huanga et al.
patent: 5895530 (1999-04-01), Shrotriya et al.
patent: 5932286 (1999-08-01), Beinglass et al.
Kyoung-Soo, Yi, et al., “The Effects of Deposition Variables on the Electrical Properties of Silicon Nitride Films by Chemical Vapor Deposition”, Journal of Vacuum Science and Technology, vol. 4, No. 6, Nov. 1986, pp. 3082-3084.
“Method of Analyzing the Carbon Contamination of Thin Insulating Layers”, IBM Technical Disclosure Bulletin, US, IBM Corp., New York, vol. 31, No. 9, Feb. 1989; p. 415.
Yeh, W.C., et al., “Low-Temperature-Chemical-Vapor-Deposition to Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine”, International Conference on Solid State Devices and Materials, Society of Applied Physics, Tokyo, Japan, Aug. 1995, pp. 488-490.
Vuillod, J., “Preparation and Characterization of Plasma Enhanced Chemical Vapor Deposited SiliconNitride and Oxynitride Films”, Journal of Vacuum Science and Technology: Part A, American Institute of Physics, New York, vol. 5, No. 4, part 3, Jul. 1987, pp. 1675-1679.
International Search Report, PCT/US00/40339, Dec. 21, 2000.

Affiliated with

Also associated with

Rating

Method of forming a silicon nitride layer on a substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a silicon nitride layer on a substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a silicon nitride layer on a substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3169165