Method of forming a shallow trench-deep trench isolation...

Details Method of forming a shallow trench-deep trench isolation... Method of forming a shallow trench-deep trench isolation...

2007-07-31

2007-07-31

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S330000

Reexamination Certificate

active

11272260

ABSTRACT:
A method of forming a shallow trench-deep trench isolation for a semiconductor device is provided.

REFERENCES:
patent: 5895253 (1999-04-01), Akram
patent: 6110794 (2000-08-01), Liu
patent: 6194287 (2001-02-01), Jang
patent: 6214696 (2001-04-01), Wu
patent: 6232043 (2001-05-01), Lin et al.
patent: 6255184 (2001-07-01), Sune
patent: 6413835 (2002-07-01), Norstrom et al.
patent: 6812526 (2004-11-01), Blanchard

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