Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-03-31
2010-12-28
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S216000, C438S305000, C438S199000, C438S508000
Reexamination Certificate
active
07858482
ABSTRACT:
A stress memorization technique (SMT) film is deposited over a semiconductor device. The SMT film is annealed with a low thermal budget anneal that is sufficient to create and transfer the stress of the SMT film to the semiconductor device. The SMT film is then removed. After the SMT film is removed, a second anneal is applied to the semiconductor device sufficiently long and at a sufficiently high temperature to activate dopants implanted for forming device source/drains. The result of this approach is that there is minimal gate dielectric growth in the channel along the border of the channel.
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Hobbs Christopher C.
Samavedam Srikanth B.
Zhang Da
Balconi-Lamica Michael J.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Le Dung A.
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