Method of forming a semiconductor device having a capacitor...

Details Method of forming a semiconductor device having a capacitor... Method of forming a semiconductor device having a capacitor...

2008-03-04

2008-03-04

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S381000

Reexamination Certificate

active

10945147

ABSTRACT:
A method of simultaneously forming at least: one capacitor two resistors and one metal-oxide semiconductor. A first doped polysilicon layer/patterned interpoly oxide film/second doped polysilicon layer is formed over an exposed oxide structure. The patterned interpoly oxide forms a capacitor interpoly portion within a capacitor region and a second interpoly portion within a second resistor region. A second doped polysilicon layer is formed over the structure. The doped first and second polysilicon layers are patterned to form: a lower capacitor doped first polysilicon portion and an overlying upper capacitor second doped polysilicon portion; a lower first resistor first polysilicon portion and an upper, overlying first resistor second polysilicon portion; a lower second resistor first polysilicon portion; and a lower metal-oxide semiconductor first polysilicon portion and an overlying metal-oxide semiconductor second polysilicon portion.

REFERENCES:
patent: 5434098 (1995-07-01), Chang
patent: 5618749 (1997-04-01), Takahashi et al.
patent: 5656524 (1997-08-01), Eklund et al.
patent: 6246084 (2001-06-01), Kim
patent: 6806136 (2004-10-01), Hsu

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