Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-22
2008-07-22
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S226000, C438S232000, C438S233000, C438S305000, C438S306000
Reexamination Certificate
active
07402485
ABSTRACT:
A sidewall spacer structure is formed adjacent to a gate structure whereby a material forming an outer surface of the sidewall spacer structure contains nitrogen. Subsequent to its formation the sidewall spacer structure is annealed to harden the sidewall spacer structure from a subsequent cleaning process. An epitaxial layer is formed subsequent to the cleaning process.
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Van Zant,
En William G.
Kammler Thorsten
Luning Scott D.
Paton Eric N.
Advanced Micro Devices , Inc.
Toledo Fernando L.
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