Method of forming a semiconductor device

Details Method of forming a semiconductor device Method of forming a semiconductor device

2007-12-18

2007-12-18

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S618000, C438S622000, C257S127000, C257S204000, C257SE27046, C257SE21632

Reexamination Certificate

active

10989937

ABSTRACT:
A semiconductor device is formed as part of an integrated circuit. The semiconductor device, which is formed in an active semiconductor layer, is surrounded by a guardian that provides a diffusion barrier against contaminants and also provides assistance in avoiding dishing above the semiconductor device during chemical mechanical polishing. The dielectric that is above the semiconductor device and inside the guardian is etched to form an opening that receives one of an optical fiber, an electromagnetic signal source, or an electromagnetic signal load. The remaining dielectric is in layers that are of substantially uniform thickness. The guardian is built up in layers that are part of a normal integrated circuit process. These include contact layers, via layers, and interconnect layers.

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