Method of forming a semiconductor device

Details Method of forming a semiconductor device Method of forming a semiconductor device

2007-01-30

2007-01-30

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S236000, C438S296000, C438S359000, C257S350000, C257SE21419

Reexamination Certificate

active

10990215

ABSTRACT:
A method of integrating a non-MOS transistor device and a CMOS electronic device on a semiconductor substrate includes forming openings within an active semiconductor layer in first and second regions of a semiconductor substrate. The first region corresponds to a non-MOS transistor device portion and the second region corresponds to a CMOS electronic device portion. The openings are formed using a dual trench process, forming openings or shallow trenches in the non-MOS transistor device portion to a first depth, and openings in the CMOS electronic device portion to a second depth greater than the first depth. The method further includes forming first and second non-MOS transistor device implant regions within the active semiconductor layer underlying the shallow trenches in the non-MOS transistor device portion, forming first and second low dose non-MOS transistor device well regions in the active semiconductor layer disposed in-between the first and second shallow trenches, forming high dose non-MOS transistor device connectivity regions, forming a salicide blocking layer overlying at least the first and second low dose non-MOS transistor device well regions, forming first and second non-MOS transistor device contact regions, and saliciding the semiconductor substrate, wherein the salicide blocking layer prevents salicidation of the first and second low dose non-MOS transistor device well regions.

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