Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-22
2005-03-22
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S627000, C438S635000, C438S637000, C438S643000, C438S675000
Reexamination Certificate
active
06869878
ABSTRACT:
The reliability and performance of planarized metallization patterns in an electrical device, for example copper, inlaid in the surface of a layer of dielectric material overlying a semiconductor wafer substrate, are enhanced by a method for reliably depositing a barrier layer selective to the metallization patterns. The method comprises forming a sacrificial dielectric layer above a substrate. Metallization patterns are formed in the sacrificial dielectric layer. The barrier layer is selectively deposited on the metallization patterns. Portions of the barrier material undesirably deposited on the sacrificial dielectric layer are removed by removing the sacrificial dielectric layer, thus preventing bridging of adjacent metallization features by the barrier layer portions. An interlevel dielectric layer is then formed in place of the sacrificial dielectric layer. The selectively deposited barrier layer advantageously reduces parasitic capacitance between metallization features in comparison to a conventional blanket-deposited silicon nitride barrier layer.
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Adem Ercan
Erb Darrell M.
Pangrle Suzette K.
Sanchez John E.
Advanced Micro Devices , Inc.
Foley & Lardner LLP
Hogans David L.
Jr. Carl Whitehead
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