Method of forming a phase change material layer, method of...

Details Method of forming a phase change material layer, method of... Method of forming a phase change material layer, method of...

2007-04-20

2011-10-11

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S381000, C257SE21257, C257SE21585, C257SE23145, C257SE45002

Reexamination Certificate

active

08034683

ABSTRACT:
A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.

REFERENCES:
patent: 6545287 (2003-04-01), Chiang
patent: 6566700 (2003-05-01), Xu
patent: 6759267 (2004-07-01), Chen
patent: 7473597 (2009-01-01), Lee et al.
patent: 7663136 (2010-02-01), Park et al.
patent: 2006/0006472 (2006-01-01), Jiang
patent: 2006/0039192 (2006-02-01), Ha et al.
patent: 2006/0076641 (2006-04-01), Cho et al.
patent: 10-2001-0004719 (2001-01-01), None
patent: 10-2004-0044882 (2004-05-01), None
patent: 10-2006-0016418 (2006-02-01), None
patent: 10-2006-0018172 (2006-02-01), None

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