Method of forming a pattern using a photoresist composition...

Details Method of forming a pattern using a photoresist composition... Method of forming a pattern using a photoresist composition...

2011-06-28

2011-06-28

Lee, Sin J. (Department: 1722)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S327000, C430S330000, C430S910000, C430S270100

Reexamination Certificate

active

07968275

ABSTRACT:
A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern.

REFERENCES:
patent: 5049463 (1991-09-01), Kato et al.
patent: 2005/0147920 (2005-07-01), Lin et al.
patent: 9-50126 (1997-02-01), None
patent: 1020000056474 (2000-09-01), None
patent: 1020010050240 (2001-06-01), None
DERWENT English abstract for JP 9-50126.
Machine-assisted English translation of JP 9-50126 provided by JPO.

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