Method of forming a pattern and method of manufacturing a...

Details Method of forming a pattern and method of manufacturing a... Method of forming a pattern and method of manufacturing a...

2007-11-27

2009-12-29

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S781000, C526S328500, C526S329600, C526S329700

Reexamination Certificate

active

07638388

ABSTRACT:
In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

REFERENCES:
patent: 6486283 (2002-11-01), Hong et al.
patent: 6548613 (2003-04-01), Jung et al.
patent: 2003-0056326 (2003-07-01), None
patent: 2004-0046704 (2004-06-01), None
patent: 2006-0035473 (2006-04-01), None
Goldbach et al. (“Synthesis and Thin Film Characterization of Poly(styrene-block-methyl methacrylate) Containing an Anthracene Dimer Photocleavable Junction Point” Macromolecules, vol. 35, pp. 4271-4276, 2002).
English language abstract of Korean Publication No. 2003-0056326.
English language abstract of Korean Publication No. 2004-0046704.
English language abstract of Korean Publication No. 2006-0035473.

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