Method of forming a non-volatile memory device having...

Details Method of forming a non-volatile memory device having... Method of forming a non-volatile memory device having...

2006-08-01

2006-08-01

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S263000, C438S264000, C438S265000, C257S316000, C257S324000, C257S371000, C257S548000

Reexamination Certificate

active

07084030

ABSTRACT:
A non-volatile memory device includes a cell region having a memory gate pattern with a charge storage layer, and a peripheral region having a high-voltage-type gate pattern, a low-voltage-type gate pattern, and a resistor pattern. To fabricate the above memory device, a device isolation layer is formed in a substrate. Gate insulating layers having difference thickness are formed in low-and high-voltage regions of the peripheral region, respectively. A first conductive layer is formed over substantially the entire surface of a gate insulating layer in the peripheral region. A triple layer including a tunneling insulating layer, a charge storage layer, and a blocking insulating layer and a second conductive layer are sequentially formed over substantially the entire surface of the substrate including the first conductive layer.

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