Method of forming a nanowire and method of manufacturing a...

Details Method of forming a nanowire and method of manufacturing a... Method of forming a nanowire and method of manufacturing a...

2006-05-10

2008-08-12

Nguyen, Tuan H (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C977S938000

Reexamination Certificate

active

07410853

ABSTRACT:
In a method of forming a nanowire in a semiconductor device, a trench is formed by partially etching a bulk semiconductor substrate. An insulation layer pattern is formed on the substrate to fill up the trench. The insulation layer pattern covers a first region of the substrate where the nanowire is formed, and additionally covers a second region of the substrate connected to the first region. An opening is formed by etching an exposed portion of the substrate by the insulation layer pattern. A spacer is formed on sidewalls of the opening and the insulation layer pattern. The nanowire connected to the second region is formed by anisotropically etching a portion of the substrate exposed by the opening until a portion of the insulation layer pattern formed in the trench is exposed.

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patent: 2007/0148857 (2007-06-01), Ban et al.
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patent: 06-140636 (1994-05-01), None
patent: 2002-110832 (2002-04-01), None
patent: 10-2004-0091309 (2004-10-01), None

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