Method of forming a memory device having improved erase speed

Details Method of forming a memory device having improved erase speed Method of forming a memory device having improved erase speed

2007-04-10

2007-04-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S954000, C257S368000

Reexamination Certificate

active

11165330

ABSTRACT:
A method of forming a memory device includes forming a memory stack on a substrate. The memory stack includes an alumina layer acting as an intergate dielectric layer. A transistor is formed on the substrate in an area separate from the memory stack. The transistor is formed to include thin gate oxide via a dry oxidation technique and a gate layer on the thin gate oxide. The thin gate oxide is formed without subjecting the thin gate oxide to thermal annealing with N2O.

REFERENCES:
patent: 6706595 (2004-03-01), Yang et al.
patent: 6780708 (2004-08-01), Kinoshita et al.
patent: 6787840 (2004-09-01), Pham et al.
patent: 6808996 (2004-10-01), Pham et al.
patent: 6815292 (2004-11-01), Fang et al.
patent: 6835662 (2004-12-01), Erhardt et al.

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