Method of forming a lithographic pattern utilizing charged beam

Details Method of forming a lithographic pattern utilizing charged beam Method of forming a lithographic pattern utilizing charged beam

1999-05-21

1999-12-21

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Electron beam imaging

G03C 500

Patent

active

060047267

ABSTRACT:
A method of forming a lithographic pattern consists in establishing a charged beam, isolating such charged particles that have the energy dispersion falling within 0.1 and 5.0 eV, and removing such particles from the beam that have the energy dispersion lying outside said range. Then the thus-established charged beam is subjected to primary focusing until the beam divergence value of from 5.10.sup.-2 to 10.sup.-4 rad is attained, a mask having a pattern stencil is irradiated with the focused charged beam. Thereupon the charged beam that has been modulated while passing through the mask is subjected to secondary focusing in order to form on the radiation-sensitive layer under processing a lithographic pattern corresponding to the stencil of a scaled-down mask pattern.

REFERENCES:
patent: 5279925 (1994-01-01), Berger et al.
patent: 5376505 (1994-12-01), Berger et al.
patent: 5468595 (1995-11-01), Livesay
patent: 5561008 (1996-10-01), Berger et al.
patent: 5789140 (1998-08-01), Chou et al.

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