Method of forming a gate oxide layer in a semiconductor...

Details Method of forming a gate oxide layer in a semiconductor... Method of forming a gate oxide layer in a semiconductor...

2006-08-15

2006-08-15

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S745000

Reexamination Certificate

active

07091074

ABSTRACT:
A first gate oxide layer pattern having a first thickness is formed in a first region of a substrate and a second gate oxide layer having a second thickness is formed in a second region of a substrate. A surface of the second gate oxide layer is selectively nitrified to form an oxynitride layer, thereby reducing a depletion effect of a poly gate and a fluctuation of threshold voltage.

REFERENCES:
patent: 5683920 (1997-11-01), Lee
patent: 5989948 (1999-11-01), Vines et al.
patent: 6124171 (2000-09-01), Arghavani et al.

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