Method of forming a gate insulator and thin film transistor...

Details Method of forming a gate insulator and thin film transistor... Method of forming a gate insulator and thin film transistor...

2008-07-29

2008-07-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S158000, C438S216000, C438S287000, C438S608000, C438S762000, C257SE21625, C257SE21639, C257SE29291

Reexamination Certificate

active

07405120

ABSTRACT:
Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor (“TFT”) incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a substrate; forming a gate insulator material layer on the substrate so as to cover the gate; and applying a heat treatment so as to diffuse oxygen from the oxygen-containing gate layer into the gate insulating material layer thereby forming the gate insulator.

REFERENCES:
patent: 6734069 (2004-05-01), Eriguchi

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