Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-05
2007-06-05
Toledo, Fernando L. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S516000, C257S532000, C257S924000
Reexamination Certificate
active
11021220
ABSTRACT:
In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is formed, the sacrificial layer surrounding the floating metal structure is etched to create a unity-k dielectric region separating the floating metal structure from the base layer. The unity-k dielectric region also separates the floating metal structure from another floating metal structure. In one embodiment, a noble gas fluoride such as xenon difluoride is used to etch a sacrificial layer of polycrystalline silicon.
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Ben-Tzur Mira
Bruner Mike
Hunter James
Ikeuchi Klyoko
Ramkumar Krishnaswamy
Cypress Semiconductor Corporation
Okamoto & Benedicto LLP
Toledo Fernando L.
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