Method of forming a contact in a semiconductor device

Details Method of forming a contact in a semiconductor device Method of forming a contact in a semiconductor device

2005-06-14

2005-06-14

Baumeister, Bradley (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S628000, C438S643000, C438S644000, C438S648000, C438S654000, C438S656000, C438S685000, C438S688000

Reexamination Certificate

active

06905960

ABSTRACT:
In a method of forming a contact in a semiconductor device, an insulating layer is formed on the semiconductor substrate. Then, a contact hole is formed by selectively etching the insulating layer. A barrier metal layer is deposited on side and bottom surfaces of the contact hole and on a top surface of the insulating layer to a uniform thickness. A wetting layer of an oxidation-resistive metal material is deposited on the barrier metal layer. A metal layer is formed on the wetting layer and fills the contact hole to thereby form a contact in the semiconductor device.

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