Method of forming a conductive pattern of a semiconductor...

Details Method of forming a conductive pattern of a semiconductor... Method of forming a conductive pattern of a semiconductor...

2006-07-25

2006-07-25

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S692000, C257SE21230, C257SE21663

Reexamination Certificate

active

07081380

ABSTRACT:
A method of forming a conductive pattern of a semiconductor device includes forming a conductive layer is on a substrate, forming a polishing protection layer on the substrate including over the conductive layer, and forming a step compensation layer on the polishing protection layer to reduce the step presented by the layer that is the polishing protection layer. The conductive layer is the exposed by removing select portions of the step compensation layer and the polishing protection layer. The conductive pattern is ultimately formed on the substrate by etching the exposed conductive layer. By planarization the intermediate structure several times once the step compensation layer is formed, a highly uniform conductive layer is sure to be formed.

REFERENCES:
patent: 4964946 (1990-10-01), Gray et al.
patent: 6181060 (2001-01-01), Rolfson
patent: 6706592 (2004-03-01), Chern et al.
patent: 2001-23981 (2001-01-01), None
Wolf, Silicon processing for the VLSI Era, vol. 2, p. 238 (1990), Lattice Press, CA.

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