Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-16
2007-01-16
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S954000, C257SE21180
Reexamination Certificate
active
10430471
ABSTRACT:
The present invention, in one embodiment, relates to a process for fabricating a charge trapping dielectric flash memory device including steps of providing a semiconductor substrate having formed thereon a gate stack comprising a charge trapping dielectric charge storage layer and a control gate electrode overlying the charge trapping dielectric charge storage layer; forming an oxide layer over at least the gate stack; and depositing a spacer layer over the gate stack, wherein the depositing step deposits a spacer material having a reduced hydrogen content relative to a hydrogen content of a conventional spacer material.
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Cheung Fred T K
Halliyal Arvind
Kamal Tazrien
Ramsbey Mark
Shiraiwa Hidehiko
Booth Richard A.
Renner , Otto, Boisselle & Sklar, LLP
Spansion LLC
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