Method of fabrication of a FinFET element

Details Method of fabrication of a FinFET element Method of fabrication of a FinFET element

2009-04-17

2011-11-08

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S478000, C257SE29255

Reexamination Certificate

active

08053299

ABSTRACT:
The present disclosure provides a FinFET element and method of fabricating a FinFET element. The FinFET element includes a germanium-FinFET element (e.g., a multi-gate device including a Ge-fin). In one embodiment, the method of fabrication the Ge-FinFET element includes forming silicon fins on a substrate and selectively growing an epitaxial layer including germanium on the silicon fins. A Ge-condensation process may then be used to selectively oxidize the silicon of the Si-fin and transform the Si-fin to a Ge-fin. The method of fabrication provided may allow use of SOI substrate or bulk silicon substrates, and CMOS-compatible processes to form the Ge-FinFET element.

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