Method of fabricating vertical channel transistor

Details Method of fabricating vertical channel transistor Method of fabricating vertical channel transistor

2010-11-24

2011-11-08

Richards, N Drew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21410

Reexamination Certificate

active

08053316

ABSTRACT:
A method of fabricating a vertical channel transistor includes: forming a line type active pattern on a substrate so as to extend in a first horizontal direction; forming a vertical channel isolating the active pattern in a second horizontal direction intersecting the first horizontal direction and extending vertically on the substrate; forming a buried bit line extending in the first horizontal direction on the substrate; and forming a word line extending in the second horizontal direction along at least one side surface of the vertical channel.

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patent: 2009-10366 (2009-01-01), None
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patent: 10-2009-0026658 (2009-03-01), None

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