Method of fabricating trap type nonvolatile memory device

Details Method of fabricating trap type nonvolatile memory device Method of fabricating trap type nonvolatile memory device

2011-04-19

2011-04-19

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S316000, C257SE21683

Reexamination Certificate

active

07927950

ABSTRACT:
A method of fabricating a floating trap type nonvolatile memory device includes forming a cell gate insulating layer on a semiconductor substrate, the cell gate insulating layer being comprised of a lower insulating layer, a charge storage layer and an upper insulating layer sequentially stacked; thermally annealing the cell gate insulating Layer at a temperature of approximately 810° C. to approximately 1370° C.; and forming a gate electrode on the thermally annealed cell gate insulating layer.

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