Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-07-15
1999-03-09
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438266, 438295, 438297, 438594, H01L 218427
Patent
active
058799923
ABSTRACT:
A method is provided for forming a split-gate flash memory cell having a step poly supporting an interpoly oxide of varying thickness for the purposes of improving the over-all performance of the cell. Polyoxide is formed over portions of a first polysilicon layer which in turn is partially etched to form a step adjacent to the side-wall of a floating gate underlying the polyoxide. A spacer is next formed of a hot temperature oxide over the step poly. An interpoly oxynitride is then formed and control gate is patterned overlapping the floating gate with the intervening interpoly oxide. The step poly and the spacer thereon form proper distances between the control gate and the floating gate while keeping the distance between the poly tip and the control gate unchanged so that appropriate couplings between the control gate and the floating gate, and between the floating gate and the substrate are achieved, thus improving the over-all performance of the split-gate flash memory having a step poly.
REFERENCES:
patent: 4339767 (1982-07-01), Horng et al.
patent: 4687541 (1987-08-01), Penney
patent: 4818715 (1989-04-01), Chao
patent: 5067108 (1991-11-01), Jeng et al.
patent: 5227322 (1993-07-01), Ko et al.
patent: 5340769 (1994-08-01), Miyamoto
patent: 5422292 (1995-06-01), Hong et al.
patent: 5447878 (1995-09-01), Park et al.
patent: 5493138 (1996-02-01), Koh
patent: 5614747 (1997-03-01), Ahn et al.
patent: 5652161 (1997-07-01), Ahn
patent: 5656532 (1997-08-01), Tseng
patent: 5670017 (1997-09-01), Hashimoto
patent: 5674782 (1997-10-01), Lee et al.
patent: 5769952 (1998-04-01), Komino
patent: 5814551 (1998-09-01), Park et al.
patent: 5814853 (1998-09-01), Chen
Hsieh Chia-Ta
Kuo Di-Son
Lin Yai-Fen
Sung Hung-Cheng
Yeh Chuang-Ke
Ackerman Stephen B.
Chaudhuri Olik
Eatun Kurt
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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