Method of fabricating static random access memory

Details Method of fabricating static random access memory Method of fabricating static random access memory

2005-10-28

2009-10-06

Nguyen, Thanh (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S257000, C257SE27098, C257SE21661

Reexamination Certificate

active

07598141

ABSTRACT:
A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.

REFERENCES:
patent: 5166767 (1992-11-01), Kapoor et al.
patent: 5818069 (1998-10-01), Kadosh et al.
patent: 5852310 (1998-12-01), Kadosh et al.
Wolf et al. “Silicon Processing for the VLSI ERA”, 1986, vol. 1, pp. 179.

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