Method of fabricating SOI substrate having an etch stop...

Details Method of fabricating SOI substrate having an etch stop... Method of fabricating SOI substrate having an etch stop...

2005-04-19

2005-04-19

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S252000, C438S435000

Reexamination Certificate

active

06881621

ABSTRACT:
A method of fabricating a SOI substrate includes sequentially forming a first semiconductor layer, which may be either a porous semiconductor layer or a bubble layer, a second semiconductor layer and a buried oxide layer on a front surface of a semiconductor substrate, forming an etch stopping layer, which may be a silicon nitride layer, on a front surface of a supporting substrate; contacting the etch stopping layer with the buried oxide layer to bond the semiconductor substrate to the supporting substrate; and selectively removing the semiconductor substrate and the first semiconductor layer to expose the second semiconductor layer. The method may additionally include forming a buffer oxide layer between the supporting substrate and the etch stopping layer.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5876497 (1999-03-01), Atoji
patent: 20020197762 (2002-12-01), Zosel et al.

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