Method of fabricating single transistor floating-body DRAM...

Details Method of fabricating single transistor floating-body DRAM... Method of fabricating single transistor floating-body DRAM...

2006-05-01

2011-12-27

Gebremariam, Samuel (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S242000

Reexamination Certificate

active

08084316

ABSTRACT:
Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.

REFERENCES:
patent: 5017504 (1991-05-01), Nishimura et al.
patent: 5739567 (1998-04-01), Wong
patent: 6861689 (2005-03-01), Burnett
patent: 2003/0168680 (2003-09-01), Hsu
patent: 06-314793 (1994-11-01), None

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