Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-07-24
2000-03-07
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438238, H01L 21336, H01L 218234
Patent
active
060339624
ABSTRACT:
A method for forming a self-aligned contact, (SAC), opening, for a semiconductor device, has been developed. The process features the formation of partial silicon nitride spacers, on the sides of polycide gate structures, via a partial anisotropic RIE procedure, applied to a silicon nitride layer, also resulting in a thin layer of silicon nitride remaining on regions between polycide gate structures. After deposition of an overlying insulator layer, a two step, anisotropic RIE procedure is used to create the SAC opening in the insulator layer, and in the underlying, thin silicon nitride layer. The first step, of the two step, SAC opening procedure, selectively removes first insulator layer, while the second step, of the two step, SAC opening procedure, selectively removes the thin silicon nitride layer.
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Chen Yue-Feng
Jeng Erik S.
Luo Hung-Yi
Tsai Ming-Horn
Ackerman Stephen B.
Lindsay Jr. Walter L.
Niebling John F.
Saile George O.
Vanguard International Semiconductor Corporation
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