Method of fabricating semiconductor memory device

Details Method of fabricating semiconductor memory device Method of fabricating semiconductor memory device

2008-05-20

2010-02-02

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C257SE21679

Reexamination Certificate

active

07655521

ABSTRACT:
A semiconductor memory device and method of fabricating a semiconductor memory device, wherein a tunnel insulating layer, a first charge trap layer and an isolation mask layer are sequentially stacked over a semiconductor substrate in which a cell region and a peri region are defined. The isolation mask layer, the first charge trap layer, the tunnel insulating layer and the semiconductor substrate are etched to thereby form trenches. An isolation layer is formed within each trench. The first charge trap layer is exposed by removing the isolation mask layer formed in the cell region. A second charge trap layer is formed on the exposed first charge trap layer and the isolation layer. A blocking layer and a control gate are formed over the semiconductor substrate in which the second charge trap layer is formed.

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Notice of Allowance dated Feb. 20, 2009, for Korean application No. 10-2007-0083348.

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