Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2007-02-02
2010-12-21
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S045010, C372S043010, C372S046013, C372S050110
Reexamination Certificate
active
07856041
ABSTRACT:
A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
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Finisar Corporation
Harvey Minsun
Park Kinam
Workman Nydegger
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